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The voltage-gated Kv1.3 K+ channel in effector memory T cells as new target for MS
Heike Wulff, … , Christine Beeton, K. George Chandy
Heike Wulff, … , Christine Beeton, K. George Chandy
Published July 15, 2003
Citation Information: J Clin Invest. 2003;112(2):298-298. https://doi.org/10.1172/JCI16921E1.
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Erratum

The voltage-gated Kv1.3 K+ channel in effector memory T cells as new target for MS

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Abstract

Authors

Heike Wulff, Peter A. Calabresi, Rameeza Allie, Sung Yun, Michael Pennington, Christine Beeton, K. George Chandy

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Figure 2

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Cells with altered channel expression are phenotypically effector memory...
Cells with altered channel expression are phenotypically effector memory T cells. (a) Flow cytometry profiles showing CD45RA and CCR7 expression in MBP-specific TCLs from an MS patient and a control subject. (b) Kv1.3 channel number/cell versus percentage of CCR7+ cells in control TCLs stimulated three, seven, and ten times with MBP (filled squares) or TT (open triangles). The number of antigenic stimulations is shown in the figure next to each symbol. Twenty or more cells were studied from each sample. (c) IKCa1 channel number/cell versus percentage of CCR7+ cells in the same TCLs as in b. Fewer data points are included in the IKCa1 plot because the number of cells in some myelin antigen-specific TCL samples were not adequate to measure both Kv1.3 and IKCa1 expression in 20 cells each.

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